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| SUD50N03-10CP New Product Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized FEATURES D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency PRODUCT SUMMARY V(BR)DSS (V) 30 APPLICATIONS ID (A)a 15 18 rDS(on) (W) 0.010 @ VGS = 10 V 0.012 @ VGS = 4.5 V D Buck Converter - High Side - Low Side D Synchronous Rectifier - Secondary Rectifier D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-10CP S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C PD TJ, Tstg TA = 25_C TA = 100_C ID IDM IS Symbol VDS VGS Limit 30 "20 15 14 100 20 71b 8.3a -55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes: a Surface mounted on 1" x 1" FR4 Board, t v 10 sec. b See SOA curve for voltage derating. Document Number: 71791 S-05485--Rev. B, 21-Jan-02 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 15 40 1.75 Maximum 18 50 2.1 Unit _C/W 1 SUD50N03-10CP Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 24 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Resistancea VGS = 10 V, ID = 15 A, TJ = 125_C rDS(on) VGS = 10 V, ID = 15 A, TJ = 175_C VGS = 4.5 V, ID = 15 A Forward Transconductancea gfs VDS = 15 V, ID = 15 A 20 0.0105 60 50 0.008 0.010 0.016 0.020 0.012 S W Symbol Test Condition Min Typ Max Unit 30 V 1 "100 1 50 150 A m mA nA Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd RG td(on) tr td(off) tf VDD = 15 V, RL = 1 W ID ] 15 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 4.5 V, ID = 15 A VGS = 0 V, VDS = 25 V, f = 1 MHz 1725 425 120 13 4.5 4.0 1.7 10 160 30 55 15 240 45 85 ns W 18 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time IS ISM VSD trr IF = 15 A, VGS = 0 V IF = 15 A, di/dt = 100 A/ms 0.85 80 15 A 100 12 110 V ns Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71791 S-05485--Rev. B, 21-Jan-02 SUD50N03-10CP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Vishay Siliconix Transfer Characteristics 30 30 20 20 TC = 125_C 10 25_C -55_C 10 3V 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 100 0.015 On-Resistance vs. Drain Current r DS(on) - On-Resistance ( W ) 80 g fs - Transconductance (S) TC = -55_C 0.012 VGS = 4.5 V VGS = 10 V 60 25_C 125_C 0.009 40 0.006 20 0.003 0 0 10 20 30 40 50 0.000 0 10 20 30 40 50 ID - Drain Current (A) ID - Drain Current (A) Capacitance 2500 10 Gate Charge 2000 C - Capacitance (pF) V GS - Gate-to-Source Voltage (V) Ciss 8 VDS = 15 V ID = 15 A 1500 6 1000 Coss 500 Crss 0 0 6 12 18 24 30 4 2 0 0 5 10 15 20 25 30 35 40 VDS - Drain-to-Source Voltage (V) Document Number: 71791 S-05485--Rev. B, 21-Jan-02 Qg - Total Gate Charge (nC) www.vishay.com 3 SUD50N03-10CP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.00 VGS = 10 V ID = 15 A I S - Source Current (A) 50 Source-Drain Diode Forward Voltage 1.75 r DS(on) - On-Resistance (W) (Normalized) 1.50 10 TJ = 150_C TJ = 25_C 1.25 1.00 0.75 0.50 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Ambient Temperature 25 1000 Limited by rDS(on) 20 I D - Drain Current (A) I D - Drain Current (A) 100 10 ms 100 ms Safe Operating Area 15 10 1 ms 10 ms 100 ms 1s 10 1 5 0.1 TA = 25_C Single Pulse 10 s 100 s dc 0 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 TA - Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 40_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71791 S-05485--Rev. B, 21-Jan-02 4 SUD50N03-10CP New Product THERMAL RATINGS Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Document Number: 71791 S-05485--Rev. B, 21-Jan-02 www.vishay.com 5 |
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